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    Titel :

    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]



    Kongress:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    5 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD [2886-505]

    Zalevsky, I. D. / Bulaev, P. V. / Padalitza, A. A. et al. | British Library Conference Proceedings | 1996


    Low Threshold MBE-grown AlInGaAs/AlGaAs Strained Multiquantum-well Lasers by Rapid Thermal Annealing

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996



    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]

    Hua, J. / Guan, X. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996


    MBE-Grown Strained AlInGaAs/AlGaAs Vertical Cavity Lasers with Low Threshold Currents and High Output Power

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996