A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to UCBO=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown.
A bipolar smart power technology for high voltage applications
Eine bipolare Smart-Leistungstechnologie für Anwendungen mit hoher Spannung
Automotive Power Electronics ; 27-29
1989
3 Seiten, 6 Quellen
Conference paper
English
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