A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to UCBO=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown.


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    Title :

    A bipolar smart power technology for high voltage applications


    Additional title:

    Eine bipolare Smart-Leistungstechnologie für Anwendungen mit hoher Spannung


    Contributors:
    Denner, V. (author) / Flohrs, P. (author) / Michel, H. (author)

    Published in:

    Publication date :

    1989


    Size :

    3 Seiten, 6 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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