A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to UCBO=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown.


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    Titel :

    A bipolar smart power technology for high voltage applications


    Weitere Titelangaben:

    Eine bipolare Smart-Leistungstechnologie für Anwendungen mit hoher Spannung


    Beteiligte:
    Denner, V. (Autor:in) / Flohrs, P. (Autor:in) / Michel, H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1989


    Format / Umfang :

    3 Seiten, 6 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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