The postirradiation response of hardened and commercial CMOS devices is investigated as a function of total dose, dose rate, and annealing time and temperature. Cobalt-60 irradiation at approximately=200 rad(SiO2)/s followed by a one-week 100 degrees C biased anneal and testing is shown to be an effective screen of hardened devices for space use. However, a similar screen and single-point test performed after Co-60 irradiation and elevated-temperature anneal cannot be generally defined for commercial devices. In the absence of detailed knowledge about device and circuit radiation response, a two-point standard test is proposed to ensure space survivability of CMOS circuits; a Co-60 irradiation and test to screen against oxide-trapped-charge-related failures, and an additional rebound test to screen against interface-trap-related failures. Testing implications for bipolar technologies are also discussed


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    Title :

    An improved standard total dose test for CMOS space electronics


    Additional title:

    Ein verbesserter Normtest für die Gesamtdosis bei CMOS-Elektronik für Raumfahrteinsatz


    Contributors:
    Fleetwood, D.M. (author) / Winokur, P.S. (author) / Riewe, L.C. (author) / Pease, R.L. (author)


    Publication date :

    1989


    Size :

    8 Seiten, 22 Quellen



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English








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