The postirradiation response of hardened and commercial CMOS devices is investigated as a function of total dose, dose rate, and annealing time and temperature. Cobalt-60 irradiation at approximately=200 rad(SiO2)/s followed by a one-week 100 degrees C biased anneal and testing is shown to be an effective screen of hardened devices for space use. However, a similar screen and single-point test performed after Co-60 irradiation and elevated-temperature anneal cannot be generally defined for commercial devices. In the absence of detailed knowledge about device and circuit radiation response, a two-point standard test is proposed to ensure space survivability of CMOS circuits; a Co-60 irradiation and test to screen against oxide-trapped-charge-related failures, and an additional rebound test to screen against interface-trap-related failures. Testing implications for bipolar technologies are also discussed


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    Titel :

    An improved standard total dose test for CMOS space electronics


    Weitere Titelangaben:

    Ein verbesserter Normtest für die Gesamtdosis bei CMOS-Elektronik für Raumfahrteinsatz


    Beteiligte:
    Fleetwood, D.M. (Autor:in) / Winokur, P.S. (Autor:in) / Riewe, L.C. (Autor:in) / Pease, R.L. (Autor:in)


    Erscheinungsdatum :

    1989


    Format / Umfang :

    8 Seiten, 22 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch








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    Bogaerts, J. / Dierickx, B. / Society for Imaging Science and Technology (ISAT) et al. | British Library Conference Proceedings | 2000