The postirradiation response of hardened and commercial CMOS devices is investigated as a function of total dose, dose rate, and annealing time and temperature. Cobalt-60 irradiation at approximately=200 rad(SiO2)/s followed by a one-week 100 degrees C biased anneal and testing is shown to be an effective screen of hardened devices for space use. However, a similar screen and single-point test performed after Co-60 irradiation and elevated-temperature anneal cannot be generally defined for commercial devices. In the absence of detailed knowledge about device and circuit radiation response, a two-point standard test is proposed to ensure space survivability of CMOS circuits; a Co-60 irradiation and test to screen against oxide-trapped-charge-related failures, and an additional rebound test to screen against interface-trap-related failures. Testing implications for bipolar technologies are also discussed
An improved standard total dose test for CMOS space electronics
Ein verbesserter Normtest für die Gesamtdosis bei CMOS-Elektronik für Raumfahrteinsatz
1989 IEEE Annual Nuclear and Space Radiation Effects Conference, 25-29 July 1989, Marco Island, FL, USA ; 1963-1970
IEEE Transactions on Nuclear Science ; 36 , 6, PT.1
1989
8 Seiten, 22 Quellen
Article (Journal)
English
Total dose effects on CMOS active pixel sensors [3965-17]
British Library Conference Proceedings | 2000
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