IGBTs are a new class of high voltage insulated gate bipolar power semiconductors that combine the advantages of MOS gate drive simplicity with the current handling capability of bipolar devices. A brief explanation of the physics and the structure of the device is given and the characteristics which make IGBTs the best choice for automotive ignition power switches are pointed out.


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    Title :

    Power switches for automotive ignition


    Additional title:

    Leistungsschalter fuer Kfz-Zuendungen


    Contributors:
    Melito, M. (author)

    Published in:

    Publication date :

    1989


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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