The development of a monolithic 512-bit ferroelectric nonvolatile memory addressed by CMOS circuitry is discussed. This development has demonstrated technical feasibility and has allowed the production of the first 16 K universal random access memory called UniRAM. The 16 K UniRAM is intended to have a 100-ns Read/Write access time, unlimited write capability, and function over the military temperature range. The device characteristics and future applications as related to the aerospace industry are discussed.


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    Title :

    Ferroelectric non-volatile memory


    Additional title:

    Ferroelektrische nichtfluechtige Speicher


    Contributors:
    Evans, J. (author) / Womack, R. (author) / Toisch, D. (author)


    Publication date :

    1988


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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