The development of a monolithic 512-bit ferroelectric nonvolatile memory addressed by CMOS circuitry is discussed. This development has demonstrated technical feasibility and has allowed the production of the first 16 K universal random access memory called UniRAM. The 16 K UniRAM is intended to have a 100-ns Read/Write access time, unlimited write capability, and function over the military temperature range. The device characteristics and future applications as related to the aerospace industry are discussed.
Ferroelectric non-volatile memory
Ferroelektrische nichtfluechtige Speicher
1988
Conference paper
English
DATA LINK BETWEEN VOLATILE MEMORY AND NON-VOLATILE MEMORY
European Patent Office | 2020
|Ferroelectric/Optoelectronic Memory/Processor
NTRS | 1992
|NTRS | 2001
|A semiconductor-ferroelectric memory device
NTRS | 1971
|High Density NDRO Ferroelectric Memory
British Library Conference Proceedings | 2002
|