The development of a monolithic 512-bit ferroelectric nonvolatile memory addressed by CMOS circuitry is discussed. This development has demonstrated technical feasibility and has allowed the production of the first 16 K universal random access memory called UniRAM. The 16 K UniRAM is intended to have a 100-ns Read/Write access time, unlimited write capability, and function over the military temperature range. The device characteristics and future applications as related to the aerospace industry are discussed.


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    Titel :

    Ferroelectric non-volatile memory


    Weitere Titelangaben:

    Ferroelektrische nichtfluechtige Speicher


    Beteiligte:
    Evans, J. (Autor:in) / Womack, R. (Autor:in) / Toisch, D. (Autor:in)


    Erscheinungsdatum :

    1988


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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