The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging between 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AMI conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen.


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    Title :

    Radiation resistance of amorphous silicon alloy solar cells


    Additional title:

    Strahlungsfestigkeit von Sonnenzellen aus amorphem Silicium


    Contributors:
    Hanak, J.J. (author) / Chen, E. (author) / Myatt, A. (author) / Woodyard, J.R. (author)


    Publication date :

    1987


    Size :

    6 Seiten, 6 Bilder, 2 Tabellen, 18 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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