The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging between 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AMI conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen.
Radiation resistance of amorphous silicon alloy solar cells
Strahlungsfestigkeit von Sonnenzellen aus amorphem Silicium
1987
6 Seiten, 6 Bilder, 2 Tabellen, 18 Quellen
Aufsatz (Konferenz)
Englisch
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