The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging between 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AMI conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Radiation resistance of amorphous silicon alloy solar cells


    Weitere Titelangaben:

    Strahlungsfestigkeit von Sonnenzellen aus amorphem Silicium


    Beteiligte:
    Hanak, J.J. (Autor:in) / Chen, E. (Autor:in) / Myatt, A. (Autor:in) / Woodyard, J.R. (Autor:in)


    Erscheinungsdatum :

    1987


    Format / Umfang :

    6 Seiten, 6 Bilder, 2 Tabellen, 18 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Silicon solar cells with improved radiation resistance

    Markvart, T. / Willoughby, A.F. / Dollery, A.A. | Tema Archiv | 1987


    Monolithic amorphous silicon alloy solar modules

    Carlson, D.E. | Online Contents | 2003



    Industrialization of Amorphous Silicon Solar Cells

    Kuwano, Y. / Sayama, K. | British Library Online Contents | 1994