The effects of 1 MeV electron irradiation on silicon solar cells with AMO efficiencies ranging from 17 % to 17.7 % are described. These cells wre processes on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Not surprisingly, results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. Furthermore, these cells do not demonstrate post-electron irradiation photon decay as has been described for cells processsed on 1-10 ohm-cm float-zone silicon.


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    Title :

    Radiation characteristics of low resistivity float zone silicon solar cells


    Additional title:

    Strahlungsschaedigung von Silicium-Sonnenzellen mit niederohmiger Schmelzzone


    Contributors:
    Crotty, G.T. (author) / Kachare, R. (author) / Anspaugh, B.E. (author)


    Publication date :

    1987


    Size :

    3 Seiten, 4 Bilder, 1 Tabelle, 6 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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