The introduction of automotive radar sensors operating in the 76 GHz - 81 GHz frequency range is a very promising application for SiGe:C HBT technologies. In this work, the performance of the critical mm-wave circuits has been benchmarked showing the suitability of SiGe:C HBT circuits as competitors to the III-V compound semiconductor circuits available in the first generation radar sensors. Additionally, because of the strong interest of the automotive industry on reliable sensor operation between -40 deg C and up to +85 deg C the temperature stability of the radar oscillator and the reliability of the SiGe:C HBTs will be discussed.


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