The introduction of automotive radar sensors operating in the 76 GHz - 81 GHz frequency range is a very promising application for SiGe:C HBT technologies. In this work, the performance of the critical mm-wave circuits has been benchmarked showing the suitability of SiGe:C HBT circuits as competitors to the III-V compound semiconductor circuits available in the first generation radar sensors. Additionally, because of the strong interest of the automotive industry on reliable sensor operation between -40 deg C and up to +85 deg C the temperature stability of the radar oscillator and the reliability of the SiGe:C HBTs will be discussed.


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    Titel :

    SiGe:C BiCMOS technologies for automotive radar applications


    Beteiligte:
    Fischer, G.G. (Autor:in) / Glisic, S. (Autor:in)


    Erscheinungsdatum :

    2008


    Format / Umfang :

    11 Seiten, 7 Bilder, 4 Tabellen, 35 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Datenträger


    Sprache :

    Englisch





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