To support space applications the authors have produced a test chip with their in house 0.25 micron BiCMOS Technology. Then the chips were radiated and measured. During measurements no threshold voltage shift and no single event latchup (SEL) were obtained up to a level of 200 krad. As conclusion of the measurement the authors developed new radiation hard design rules and according to these rules the authors created a new radiation hard CMOS library. With this new library the authors produced a Leon3 chip with triple module redundancy. Single event upsets did occur. Therefore the authors upgrade the library to make the flip flops more resistant against single event upset (SEU) by adding two p-MOS transistors.


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    Title :

    Radiation hard 0.25 micron CMOS library at IHP


    Additional title:

    Eine strahlungsfeste 0.25 micron CMOS-Bibliothek bei IHP


    Contributors:


    Publication date :

    2008


    Size :

    3 Seiten, 7 Bilder, 5 Quellen




    Type of media :

    Conference paper


    Type of material :

    Storage medium


    Language :

    English




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