The MOS devices of the standard 0.25 micrometer CMOS technology have been characterized for their immunity against ionizing radiation. While the shift of the threshold voltage is acceptable for total doses in the range of several KGy, the leakage of irradiated NMOST needed to be improved through process modification. Additional processing steps to optimize the lateral isolation of the transistors yielded devices with total dose immunity up to 4 KGy. No special layout rules for the transistors are required which eliminates the need for a radiation tolerant specific design library and makes the radiation tolerant technology mask compatible with the standard process.


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    Title :

    0.25 micron radiation tolerant CMOS technology


    Additional title:

    Strahlungstolerante 0,25-Mikrometer-CMOS-Technologie


    Contributors:
    Roedde, K. (author)


    Publication date :

    2002


    Size :

    3 Seiten, 7 Bilder




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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