Since market introduction of Toyota Prius in 1997 in Japan numbers of hybrid drives have steadily increased. Nevertheless only by development of more efficient components (batteries, motors and power electronics) it will be possible to establish hybrid technology in the long run. Advances in power semiconductor modules are a key success factor. This paper discusses requirements and trends on interconnection as well as device technologies for second generation power semiconductor modules. Following a discussion on the typical needs of hybrid vehicles, recent achievements and trends of components such as IGBT, MOSFET, and interconnections between digital circuit boards are described and demonstrated in photographs and data plots.
Trends in power semiconductor modules for the second generation of hybrid electric vehicles
2006
6 Seiten, 12 Bilder, 2 Tabellen, 7 Quellen
Conference paper
English
Aluminiumnitrid , Aluminiumoxid , Aluminiumsiliciumlegierung , elektrische Verbindungstechnik , Elektroauto , Elektromotor , Entwicklungsstand , Halbleitersubstrat , Hybridantrieb , IGBT (insulated gate bipolar transistor) , IGBT-Modul , Kraftfahrzeugelektronik , Leistungselektronik , MOS-FET , Trend (Entwicklung) , Verbrennungsmotor
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