Aluminum nitride (AlN) and aluminum oxynitride (AlNO) films were sputter deposited onto epoxy coated silicon substrates. The films were characterized by: electron microscopy; atomic force microscopy; theta-2 theta X-ray diffractometry; and profilometry. The surface morphology of the films was a function of the feed gas oxygen content. Amorphous aluminum oxynitride films formed with oxygen flows of more than 0.5 seem yielded smooth, continuous coatings over the epoxy. The oxynitride/epoxy/silicon structure was exposed in an electron cyclotron resonance low Earth orbit simulator, and showed 2-3 nm roughening up to the maximum fluence of 2.4 x 1022 atoms/cm2. This is equivalent to 94-940 days in low Earth orbit, depending on orbit height.
Aluminum oxynitride coatings for oxidation resistance of epoxy films
Surface and Coatings Technology ; 155 , 2-3 ; 130-135
2002
6 Seiten, 24 Quellen
Article (Journal)
English
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