Aluminum nitride (AlN) and aluminum oxynitride (AlNO) films were sputter deposited onto epoxy coated silicon substrates. The films were characterized by: electron microscopy; atomic force microscopy; theta-2 theta X-ray diffractometry; and profilometry. The surface morphology of the films was a function of the feed gas oxygen content. Amorphous aluminum oxynitride films formed with oxygen flows of more than 0.5 seem yielded smooth, continuous coatings over the epoxy. The oxynitride/epoxy/silicon structure was exposed in an electron cyclotron resonance low Earth orbit simulator, and showed 2-3 nm roughening up to the maximum fluence of 2.4 x 1022 atoms/cm2. This is equivalent to 94-940 days in low Earth orbit, depending on orbit height.


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    Titel :

    Aluminum oxynitride coatings for oxidation resistance of epoxy films


    Beteiligte:
    Ianno, N.J. (Autor:in) / Enshashy, H. (Autor:in) / Dillon, R.O. (Autor:in)

    Erschienen in:

    Surface and Coatings Technology ; 155 , 2-3 ; 130-135


    Erscheinungsdatum :

    2002


    Format / Umfang :

    6 Seiten, 24 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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