Correlated to the ever shrinking dimension of the nowadays electronic devices and since the electronic factories try to stick at the silicon technology as long as possible new problems arise. One of these problems is the breakdown of the gate-oxide function of silicon dioxide layers at the necessarily small thickness of few nanometers and below. The main reasons of the failure of such silicon oxide are tunneling of charge carriers and diffusion of dopands through the ultrathin layer. The disadvantage of the SiO/sub 2/ may be overcome by inserting nitrogen atoms into the silicon-dioxide network. To do this with sufficient lateral homogeneity is a nowadays challenge for deposition and control. We report on an infrared spectroscopic study of silicon oxynitride films with respect to the lateral variation of the chemical composition on a silicon wafer.
An IR spectroscopic study of silicon oxynitride films
01.01.2004
151574 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Silicon Oxynitride in Integrated Optics
British Library Conference Proceedings | 1998
|Low-Hydrogen Silicon Oxynitride Optical Fibers Prepared by SPCVD
British Library Online Contents | 1995
|Ion-implantation modification of lithium-phosphorus oxynitride thin-films
Online Contents | 2002
|Silicon oxynitride waveguides developed for optomechanical sensing functions [4944-25]
British Library Conference Proceedings | 2003
|Aluminum oxynitride coatings for oxidation resistance of epoxy films
Tema Archiv | 2002
|