Advanced sensors can be created that have high functional levels of electronics on a single chip. This is made possible by a second generation process based upon silicon-on-insulator (SOI) technology merged with sub-micron digital circuitry. By building the structure first it is possible to foundry the electronics as an add-on and they complete the process to release the sensor. Electronics to communicate over a two wire bus and program the sensor are now possible. SOI enables this combination of previously incompatible MEMS and sub-micron geometry electronics on a single IC. This achieves the densest and the highest utilisation of silicon and achieves the maximum number of die per wafer as the area for chip-to-chip bond pads is eliminated. The resulting IC package consumes 25 mm2 (5 mm x 5 mm) board space. A common bus and associated protocol remain the major limitation to realising a common safety sensor for different car platforms and safety systems.


    Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Micromachined sensors for advanced microsystems


    Additional title:

    Mikromechanische Sensoren für den Einsatz in künftigen Mikrosystemen


    Contributors:
    Sulouff, B. (author) / Riedel, B. (author)


    Publication date :

    2001


    Size :

    8 Seiten, 4 Bilder, 7 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Micromachined Sensors for Advanced Microsystems

    Sulouff, B. | British Library Conference Proceedings | 2001


    Micromachined fiber optic sensors

    Culshaw, Brian | SPIE | 1993


    Advanced microsystems for automotive applications 2006

    Valldorf, Jürgen ;Gessner, Wolfgang | TIBKAT | 2006



    Advanced microsystems for automotive applications 2006

    Valldorf, Jürgen ;Gessner, Wolfgang | SLUB | 2006