Advanced sensors can be created that have high functional levels of electronics on a single chip. This is made possible by a second generation process based upon silicon-on-insulator (SOI) technology merged with sub-micron digital circuitry. By building the structure first it is possible to foundry the electronics as an add-on and they complete the process to release the sensor. Electronics to communicate over a two wire bus and program the sensor are now possible. SOI enables this combination of previously incompatible MEMS and sub-micron geometry electronics on a single IC. This achieves the densest and the highest utilisation of silicon and achieves the maximum number of die per wafer as the area for chip-to-chip bond pads is eliminated. The resulting IC package consumes 25 mm2 (5 mm x 5 mm) board space. A common bus and associated protocol remain the major limitation to realising a common safety sensor for different car platforms and safety systems.


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    Titel :

    Micromachined sensors for advanced microsystems


    Weitere Titelangaben:

    Mikromechanische Sensoren für den Einsatz in künftigen Mikrosystemen


    Beteiligte:
    Sulouff, B. (Autor:in) / Riedel, B. (Autor:in)


    Erscheinungsdatum :

    2001


    Format / Umfang :

    8 Seiten, 4 Bilder, 7 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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