The molecular beam epitaxy (MBE) and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si were investigated. GaAs cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 106 cm-2, identical to the underlying relaxed Ge cap of the graded buffer. AlGaAs/GaAs double heterostructures were grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si.


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    Title :

    High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics


    Contributors:


    Publication date :

    2000


    Size :

    10 Seiten, 11 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English