The molecular beam epitaxy (MBE) and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si were investigated. GaAs cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 106 cm-2, identical to the underlying relaxed Ge cap of the graded buffer. AlGaAs/GaAs double heterostructures were grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si.


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    Titel :

    High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics


    Beteiligte:
    Carlin, J.A. (Autor:in) / Ringel, S.A. (Autor:in) / Fitzgerald, E.A. (Autor:in) / Bulsara, M. (Autor:in)


    Erscheinungsdatum :

    2000


    Format / Umfang :

    10 Seiten, 11 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch