The molecular beam epitaxy (MBE) and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si were investigated. GaAs cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 106 cm-2, identical to the underlying relaxed Ge cap of the graded buffer. AlGaAs/GaAs double heterostructures were grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si.
High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics
2000
10 Seiten, 11 Quellen
Aufsatz (Konferenz)
Englisch
High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics
Online Contents | 2001
|Online Contents | 1998
|Tema Archiv | 1998
|Silicon and GeSi Raman Lasers and Amplifiers
British Library Conference Proceedings | 2005
|