Repeater circuits for a high-speed optical transmission system are integrated on six monolithic chips using Si shallow junction bipolar devices having a 5-6 GHz transition frequency. To achieve the high reliability essential for submarine use, a two-level metallization structure is introduced which utilizes Cu-doped Al and Al/Pt/Ti in conjunction with a TiN diffusion barrier. Sufficient performance measurements are achieved. The transimpedance and bandwidth of the equalizing amplifier IC are 91 dB and 310 MHz. The timing amplifier IC phase deviation is kept within 10 degrees. The decision IC sensitivity is less than 3%. Finally, overall field experiments confirm that an efficient 400 Mb/s optical repeater system can be constructed using these ICs.


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    Title :

    High-speed optical repeater ICs


    Additional title:

    Optische Hochgeschwindigkeits-Verstaerker-ICs


    Contributors:
    Kamoto, T. (author) / Kanamori, S. (author)


    Publication date :

    1985


    Size :

    7 Seiten, 12 Quellen


    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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