A high quality GaSb bicrystal was grown in a Bridgeman type arrangement under microgravity conditions on board of Salyut-6. Rutherford back-scattering measurements indicate oxide and damage free surfaces. Scanning electron microscopy revealed microfacets on the space grown sample. The morphology of the sample suggests a crystallization quite free of a wall effect. A comparison is given between space and terrestrial GaSb ingots, showing differences in surface quality, crystal perfection and hole mobilities. In the space grown sample a muh=2700 cm2 v- 1 s- 1 value was found, while for the terrestrial control this value was only 2000 cm2 v- 1 s- 1.
The growth of GaSb under microgravity conditions
Wachstum von GaSb unter Bedingung der Mikrogravitation
Journal of Crystal Growth ; 71 , 3 ; 538-550
1985
13 Seiten, 18 Quellen
Article (Journal)
English
DREI-FUENF-VERBINDUNG , RASTERELEKTRONENMIKROSKOP , MORPHOLOGIE , KRISTALLISATION , OBERFLAECHENGUETE , GALLIUMANTIMONID , SCHMELZE , MIKROSKOPIE , KRISTALLWACHSTUM , HALBLEITERWERKSTOFF , MATERIALFORSCHUNG , KRISTALLOGRAPHIE , DEFEKTELEKTRON , LADUNGSTRAEGERBEWEGLICHKEIT , OBERFLAECHENANALYSE , GRAVITATIONSFELD , HALBLEITERTECHNOLOGIE , GALLIUMVERBINDUNG , HALBLEITERWACHSTUM , KRISTALLWACHSTUM AUS DER SCHMELZE , SCHWERELOSIGKEIT , BIKRISTALL , WALL EFFECT , CRYSTAL MORPHOLOGY , LOECHERBEWEGLICHKEIT
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