High efficiency semiconsemiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66 % decrease in AMO efficiency compared to a typical 23 % decrease in n/p junction cells. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination. Thermionic emission theory indicates a eadecrease in barrier height with incrased fluence.


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    Title :

    1 MeV electron radiation effects in SnO2-SiO2-silicon solar cells


    Additional title:

    Bestrahlungseffekte von 1 MeV-Elektronen auf Solarzellen aus SnO2-SiO2


    Contributors:

    Published in:

    Publication date :

    1983


    Size :

    4 Seiten, 4 Bilder, 1 Tabelle, 9 Quellen



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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