High efficiency semiconsemiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66 % decrease in AMO efficiency compared to a typical 23 % decrease in n/p junction cells. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination. Thermionic emission theory indicates a eadecrease in barrier height with incrased fluence.
1 MeV electron radiation effects in SnO2-SiO2-silicon solar cells
Bestrahlungseffekte von 1 MeV-Elektronen auf Solarzellen aus SnO2-SiO2
IEEE Transactions on Nuclear Science ; 30 , 6 ; 4169-4172
1983
4 Seiten, 4 Bilder, 1 Tabelle, 9 Quellen
Aufsatz (Zeitschrift)
Englisch
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