A method of radiation dosimetry using a Metall-Nitride-Oxide-Semicondutor (MNOS) transistor as the detector was developed and partially evaluated. An MNOS dosimeter is shown capable of measuring doses from 10 k rads to 4 M rads. Repeatability of observations of threshold voltage versus radiation dosage indicates a precision of plus/minus 1 % of measured dose from 200 k rads to 4 M rads (Si). A schematic is given for the circuit tested. Determination of dosage with the system is indirect and requires the use of calibration curves. Each dosimeter must be individually calibrated. Exposure to 2x10(exp7) rads did not degrade performance. The MNOS transistors eventually failed: probabily due to charge migration from the large integrated circuit chip on which they were fabricated. Discrete, non-stepped gage MNOS transistors are recommended.
Use of a metal-nitride-oxide-semiconductor as the detector for a radiation dosimeter
Verwendung eines Metall-Nitrid-Oxid-Halbleiters als Detektor fuer ein Strahlungsdosimeter
IEEE Transactions on Nuclear Science ; 25 , 6/Dez. ; 1613-1618
1978
6 Seiten, 5 Bilder, 3 Tabellen, 16 Quellen
Article (Journal)
English
Advanced p-MOSFET Ionizing-Radiation Dosimeter
NTRS | 1994
|Advanced p-MOSFET Ionizing-Radiation Dosimeter
Online Contents | 1994