Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.


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    Title :

    Advanced p-MOSFET Ionizing-Radiation Dosimeter


    Contributors:

    Published in:

    Publication date :

    1994-05-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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