Abstract A memristor is a nonlinear resistor with time memory. Usually, the memory without any loss is an ideal case. Recent studies show that there is a memory loss of the classic HP $$\mathrm{TiO_2}$$ linear model, which has memory effect between no memory and ideal memory (complete memory). To describe the memory property, we propose a fractional-order HP $$\mathrm{TiO_2}$$ memristor model with the order $$\alpha $$ between 0 and 1, and the pinched hysteresis loop characteristics are studied as the fractional-order model under periodic external excitation. Compared with the classic integer-order memristor model, numerical simulations show that the fractional-order derivative $$\alpha $$ is also an important parameter effects the pinched hysteresis loop area, the memristor value and the output voltage amplitude evidently and regularly.
Pinched Hysteresis Loop Characteristics of a Fractional-Order HP $$\mathrm{TiO_2}$$ memristor
2017-01-01
9 pages
Article/Chapter (Book)
Electronic Resource
English
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