Abstract A memristor is a nonlinear resistor with time memory. Usually, the memory without any loss is an ideal case. Recent studies show that there is a memory loss of the classic HP $$\mathrm{TiO_2}$$ linear model, which has memory effect between no memory and ideal memory (complete memory). To describe the memory property, we propose a fractional-order HP $$\mathrm{TiO_2}$$ memristor model with the order $$\alpha $$ between 0 and 1, and the pinched hysteresis loop characteristics are studied as the fractional-order model under periodic external excitation. Compared with the classic integer-order memristor model, numerical simulations show that the fractional-order derivative $$\alpha $$ is also an important parameter effects the pinched hysteresis loop area, the memristor value and the output voltage amplitude evidently and regularly.


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    Titel :

    Pinched Hysteresis Loop Characteristics of a Fractional-Order HP $$\mathrm{TiO_2}$$ memristor


    Beteiligte:
    Shi, Min (Autor:in) / Hu, Songlin (Autor:in)


    Erscheinungsdatum :

    01.01.2017


    Format / Umfang :

    9 pages





    Medientyp :

    Aufsatz/Kapitel (Buch)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch








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