The insulated gate bipolar transistor combines the advantages of metal-oxide semiconductor field effect transistors and power transistors. It has the advantages of low on-resistance, gate voltage control and wide safe working area, and has the processing capabilities of high speed, high voltage and large current. The application in rail transit is becoming more and more extensive. By studying the failure mechanism of the IGBT module, it can be known that the thermal stress generated by the temperature is the main form of its failure. In order to study the junction temperature changes of the IGBT switching devices in the traction converter under the traction and braking conditions of subway trains, the control strategy based on the vector control of the rotor field orientation is established by using MATLAB/Simulink to establish an energy mutual-feeding pair-towing system Under the electrothermal simulation model, the junction temperature change curve of the IGBT is obtained, and the junction temperature change trend under different working conditions is summarized by analyzing the junction temperature waveform.


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    Title :

    Electrothermal Simulation of IGBT Module Based on Simulink


    Additional title:

    Lect. Notes Electrical Eng.


    Contributors:
    Jia, Limin (editor) / Qin, Yong (editor) / Liang, Jianying (editor) / Liu, Zhigang (editor) / Diao, Lijun (editor) / An, Min (editor) / Guo, Mengxue (author) / Sha, Yanbei (author) / Wei, Lu (author) / Jiang, Xuedong (author)

    Conference:

    International Conference on Electrical and Information Technologies for Rail Transportation ; 2021 October 21, 2021 - October 23, 2021



    Publication date :

    2022-02-22


    Size :

    9 pages





    Type of media :

    Article/Chapter (Book)


    Type of material :

    Electronic Resource


    Language :

    English




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