The present paper gives an overview on the development and current status of photoelectronic imaging devices in China. Particular emphasis is given to devices aimed at image intensification and image conversion, e.g., image intensifiers, low light level pick-up devices, electronographic tubes, high speed photographic converter tubes, intensified CCDs, infrared detectors, as well as basic theory and design, and components and methods of testing for the photoelectronic imaging systems in China.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Development and current status of photoelectronic image devices in China


    Contributors:
    Zhou, LiWei (author)

    Conference:

    Photoelectronic Detection and Imaging: Technology and Applications '93 ; 1993 ; Beijing,China


    Published in:

    Publication date :

    1993-04-01





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Photoelectronic imaging devices

    Nudelman, S. | NTRS | 1970



    Photoelectronic Monitor of Motion Sickness

    Oman, C. M. / Cook, W. J. | NTRS | 1986


    International Conference Photoelectronic and Night Vision Devices : 28 - 30 October 1998, Moscow, Russia

    International Conference on Photoelectronics and Night Vision Devices / Gosudarstvennoe Predprijatie Naučno-Proizvodstvennoe Obʺedinenie Orion, Gosudarstvennyj Naučnyj Centr, Moskau | TIBKAT | 1999