The present paper gives an overview on the development and current status of photoelectronic imaging devices in China. Particular emphasis is given to devices aimed at image intensification and image conversion, e.g., image intensifiers, low light level pick-up devices, electronographic tubes, high speed photographic converter tubes, intensified CCDs, infrared detectors, as well as basic theory and design, and components and methods of testing for the photoelectronic imaging systems in China.
Development and current status of photoelectronic image devices in China
Photoelectronic Detection and Imaging: Technology and Applications '93 ; 1993 ; Beijing,China
Proc. SPIE ; 1982
01.04.1993
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Photoelectronic imaging devices
NTRS | 1970
|Design of photoelectronic optical image sensors
NTRS | 1973
|Photoelectronic Monitor of Motion Sickness
NTRS | 1986
|Status, Development of Laser Devices in China
NTIS | 1987
|