Wet-oxidation experiments in a nitrogen environment at high temperatures are conducted to improve the photoelectricity performance of the 850nm VCSELs. It is very important to accurately control the oxidation aperture.We have carried out upon the wafer of VCSELs with the same structure by changing the furnace temperature and oxidation time, then micro-probe analyses have been examined at different oxidation depth by scanning electron microscope (SEM) and by X-ray. Oxidation products are examined at different oxidation depths of oxidation layer and each component content is analyzed, we get the law of the wet-oxidation. The oxidation process thermal stability and precision can be improved by lowering the oxidation temperature and prolonging the oxidation time.


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    Title :

    The law of wet oxidation rate in 850nm VCSELs


    Contributors:
    Feng, Yuan (author) / Liu, Guojun (author) / Yan, Changling (author) / Hao, Yongqin (author) / Wang, Yong (author) / Lu, Peng (author) / Li, Yang (author) / Li, Zaijin (author)

    Conference:

    Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I ; 2014 ; China,China


    Published in:

    Publication date :

    2015-03-04





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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