High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy


    Contributors:
    Lv, Yingfei (author) / Hu, Shuhong (author) / Xu, Yonggang (author) / Wang, Yang (author) / Yu, Guolin (author) / Dai, Ning (author)

    Conference:

    Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II ; 2014 ; China,China


    Published in:

    Publication date :

    2015-04-13





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]

    Rutkowski, J. / Raczynska, J. / Rogalski, A. et al. | British Library Conference Proceedings | 1996


    Advances in InAsSb-Based Mid-Infrared Lasers and LEDs, Grown by MOCVD

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy [4078-27]

    Zhu, J. / Mao, X. / Chan, Y.-C. et al. | British Library Conference Proceedings | 2000


    InAsSb/AlAsSb nBn HOT focal plane array

    Zhou, Peng / Liu, Ming / Wen, Tao et al. | British Library Conference Proceedings | 2021


    Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]

    Ciorga, M. / Bryja, L. / Misiewicz, J. et al. | British Library Conference Proceedings | 1996