High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.
Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II ; 2014 ; China,China
Proc. SPIE ; 9522
2015-04-13
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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