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    Titel :

    Advances in InAsSb-Based Mid-Infrared Lasers and LEDs, Grown by MOCVD



    Kongress:

    Annual meeting; 10th, IEEE; Lasers and Electro-Optics Society: LEOS '97 ; 1997 ; San Francisco; CA



    Erscheinungsdatum :

    1997-01-01


    Format / Umfang :

    2 pages


    Anmerkungen:

    Described as proceedings. IEEE cat no: 97CH36057




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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    Correc, P. / Landreau, J. / Bouley, J. C. et al. | SPIE | 1986


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    Kurtz, S. R. / The Electrochemical Society | British Library Conference Proceedings | 1995


    Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD

    Razeghi, M. / Choi, Y. H. / Kim, J. D. et al. | British Library Conference Proceedings | 1995


    InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]

    Rutkowski, J. / Raczynska, J. / Rogalski, A. et al. | British Library Conference Proceedings | 1996


    GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth

    Lin, N.M. / Chang, S.J. / Shei, S.C. et al. | British Library Online Contents | 2011