In this work, we report on the design, fabrication, and characterization of MWIR unipolar barrier photodetectors based on InAs/GaSb Type-II superlattice. We have designed, fabricated, and characterized band-structure engineered MWIR photodetectors based on the pBiBn architecture. The devices have been characterized using the most relevant radiometric figures of merits. At 200 K, the peak value of detectivity is 1.2 x 1011 Jones at an applied bias voltage of -0.5 V.
MWIR unipolar barrier photodetectors based on strained layer superlattices
Nanophotonics and Macrophotonics for Space Environments IX ; 2015 ; San Diego,California,United States
Proc. SPIE ; 9616
2015-09-01
Conference paper
Electronic Resource
English
MWIR unipolar barrier photodetectors based on strained layer superlattices [9616-14]
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