In this work, we report on the design, fabrication, and characterization of MWIR unipolar barrier photodetectors based on InAs/GaSb Type-II superlattice. We have designed, fabricated, and characterized band-structure engineered MWIR photodetectors based on the pBiBn architecture. The devices have been characterized using the most relevant radiometric figures of merits. At 200 K, the peak value of detectivity is 1.2 x 1011 Jones at an applied bias voltage of -0.5 V.


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    Title :

    MWIR unipolar barrier photodetectors based on strained layer superlattices



    Conference:

    Nanophotonics and Macrophotonics for Space Environments IX ; 2015 ; San Diego,California,United States


    Published in:

    Publication date :

    2015-09-01





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English






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