In this work, we report on the design, fabrication, and characterization of MWIR unipolar barrier photodetectors based on InAs/GaSb Type-II superlattice. We have designed, fabricated, and characterized band-structure engineered MWIR photodetectors based on the pBiBn architecture. The devices have been characterized using the most relevant radiometric figures of merits. At 200 K, the peak value of detectivity is 1.2 x 1011 Jones at an applied bias voltage of -0.5 V.


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    Titel :

    MWIR unipolar barrier photodetectors based on strained layer superlattices


    Beteiligte:

    Kongress:

    Nanophotonics and Macrophotonics for Space Environments IX ; 2015 ; San Diego,California,United States


    Erschienen in:

    Erscheinungsdatum :

    01.09.2015





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch






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