In this paper we analyze the frequency response of 1.3+m highly strained InAsP/InGaAsP MQW lasers under small signal conditions. We show that in these lasers, electrical parasitics limit the high frequency response. These parasitics which are inherent to the laser structure, show an inductance-like behavior as determined from impedance measurements. We further show that the effect of the parasitic inductance in the laser modulation response can be significantly reduced by modifying the laser driving circuit.


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    Title :

    Analysis of the modulation response of 1.3-μm strained InAsP lasers


    Contributors:

    Conference:

    Semiconductor Lasers for Lightwave Communication Systems ; 2001 ; Denver,CO,United States


    Published in:

    Publication date :

    2001-11-08





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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