In this paper we analyze the frequency response of 1.3+m highly strained InAsP/InGaAsP MQW lasers under small signal conditions. We show that in these lasers, electrical parasitics limit the high frequency response. These parasitics which are inherent to the laser structure, show an inductance-like behavior as determined from impedance measurements. We further show that the effect of the parasitic inductance in the laser modulation response can be significantly reduced by modifying the laser driving circuit.
Analysis of the modulation response of 1.3-μm strained InAsP lasers
Semiconductor Lasers for Lightwave Communication Systems ; 2001 ; Denver,CO,United States
Proc. SPIE ; 4533
2001-11-08
Conference paper
Electronic Resource
English
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