Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.


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    Title :

    Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy


    Contributors:


    Publication date :

    1996-01-01


    Size :

    148008 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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