Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.


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    Titel :

    Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy


    Beteiligte:
    Thiagarajan, P. (Autor:in) / Giudice, G.E. (Autor:in) / Temkin, E. (Autor:in) / Robinson, G.Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    148008 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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