Highly Strained 1.3m InAsP/InGaAsP Lasers With Low Threshold Currents Grown by Gas-Source Molecular Beam Epitaxy
International conference; 15th, Semiconductor laser ; 1996 ; Haifa; Israel
1996-01-01
2 pages
Also known as ISLC '96. IEEE cat no 96CH35896 and 96CB35896
Aufsatz (Konferenz)
Englisch
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