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    Titel :

    Highly Strained 1.3m InAsP/InGaAsP Lasers With Low Threshold Currents Grown by Gas-Source Molecular Beam Epitaxy



    Kongress:

    International conference; 15th, Semiconductor laser ; 1996 ; Haifa; Israel



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    2 pages


    Anmerkungen:

    Also known as ISLC '96. IEEE cat no 96CH35896 and 96CB35896



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch





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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    Characteristics of Low Threshold 1.3m Lasers Grown by Solid Source Molecular Beam Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Analysis of the modulation response of 1.3-μm strained InAsP lasers

    Anton, Ovidio / Patel, Dinesh / Vaschenko, G. et al. | SPIE | 2001