In this paper, we discuss the metal-oxide-silicon field-effect transistor (MOSFET) also known as the insulated-gate field-effect transistor (IGFET); its applications; the heat it generates because of its material properties. The paper discusses MOSFET’s dimensions, densities, and why the heat it generates is continually increasing. Finally, there is discussion about various present-day thermal management solutions used for resolving MOSFET thermal issues and a recommendation for future approaches.


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    Title :

    Heat Generation in the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and Possible Thermal Management Solutions


    Additional title:

    Sae Technical Papers


    Contributors:

    Conference:

    International Conference On Environmental Systems ; 2004



    Publication date :

    2004-07-19




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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