This paper describes a ultra high power IGBT inverter. This inverter is the core component of a power supply intended to charge a 6.66 μF capacitor to 30kV (3kJ) in approximately 40 ms. The primary DC source voltage is approximately 500V. The topology of the IGBT inverter is an H-bridge rated at 1200V and 2400A. A step-up transformer and a rectifier bank are connected on the output of the H-Bridge. The IGBTs are high power modules made by Semikron. For compactness, the cooling fins of the modules have been removed down to the aluminum base-plate. This was possible due to the fact that the supply is only operated in short term burst mode. The inverter is controlled by Pulse Width Modulation (PWM) generated by a HC12 micro-controller made by Motorola. The micro-controller provides control flexibility for adaptation to the characteristics of the primary DC source. The IGBTs are switched at 10kHz.
Design of an Ultra High Power IGBT Inverter for Rapid Capacitor Charging
Sae Technical Papers
Power Systems Conference ; 2000
2000-10-31
Conference paper
English
Design of an Ultra High Power IGBT Inverter for Rapid Capacitor Charging
British Library Conference Proceedings | 2000
|High-power high-voltage access type IGBT charging mechanism
European Patent Office | 2021
|Novel High Power IGBT Inverter for a Power Conditioning System
British Library Conference Proceedings | 2005
|IGBT based inverter design for vehicle application
Tema Archive | 2010
|