We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al 2 O 3 , 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm 2 Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd. Selective laser doping has been introduced in our n‐type passivated emitter, rear totally diffused, allowing the implementation of a shallow diffused front surface field (FSF) and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements to our rear junction structure, 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm 2 Czochralski‐Si.
Progress on large area n‐type silicon solar cells with front laser doping and a rear emitter
Progress in photovoltaics ; 24 , 8
2016
Article (Journal)
English
n‐type , belt furnace anneal , solar cell , FSF , laser doping , large area , rear emitter
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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