We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al 2 O 3 , 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm 2 Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd. Selective laser doping has been introduced in our n‐type passivated emitter, rear totally diffused, allowing the implementation of a shallow diffused front surface field (FSF) and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements to our rear junction structure, 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm 2 Czochralski‐Si.


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    Titel :

    Progress on large area n‐type silicon solar cells with front laser doping and a rear emitter



    Erschienen in:

    Progress in photovoltaics ; 24 , 8 ; 1149-1156


    Erscheinungsdatum :

    2016




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher





    Analysis and modeling of the rear side of industrial-type passivated emitter and rear silicon solar cells

    Kranz, Christopher / Gottfried Wilhelm Leibniz Universität Hannover | TIBKAT | 2016

    Freier Zugriff

    Analysis and modeling of the rear side of industrial-type passivated emitter and rear silicon solar cells

    Kranz, Christopher / Gottfried Wilhelm Leibniz Universität Hannover | TIBKAT | 2016