Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Modeling spin-dependent transport in InAs/GaSb/AISb resonant tunneling structures


    Contributors:

    Conference:

    8th International Workshop on Computational Electronics (IWCE-8)


    Publication date :

    2001-10-15


    Type of media :

    Conference paper


    Type of material :

    No indication


    Language :

    English




    InAs/GaSb/AlSb resonant tunneling spin device concepts

    Ting, D. / Cartoixa, X. | NTRS | 2003


    Theoretical analysis of spin polarization effects in InAs/GaSb/AlSb resonant tunneling structures

    Ting, D. Z. -Y. / Cartoixa-Soler, X. / McFill, T. C. et al. | NTRS | 2001


    Saturation characteristics of a 1.55 /spl mu/m GaSb/AISb MQW Fabry-Perot mirror

    Hall, K.C. / Yashfrir, Yu. / van Driel, H.M. et al. | IEEE | 1997


    Surface conduction in InAs and GaSb

    Sidor, D. E. / Savich, G. R. / Wicks, G. W. | SPIE | 2015


    Resonant tunneling through single InAs quantum dot at room temperature

    Lu, Wei / Li, Tianxin / Xiong, Dayuan et al. | IEEE | 2006